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Package Marking and Ordering Information
Device Marking
FDB14N30
Device
FDB14N30TM
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics T C = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0V, I D = 250 ? A
I D = 250 ? A, Referenced to 25 ? C
V DS = 300V, V GS = 0V
V DS = 240V, T C = 125 ? C
V GS = 30V, V DS = 0V
V GS = -30V, V DS = 0V
300
--
--
--
--
--
--
0.3
--
--
--
--
--
--
1
10
100
-100
V
V/ ? C
? A
? A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 ? A
V GS = 10V, I D = 7A
V DS = 40V, I D = 7A
3.0
--
--
--
0.24
10.5
5.0
0.29
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V,
f = 1.0MHz
--
--
--
815
150
17
1060
195
25
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 150V, I D = 14A
R G = 25 ?
V DS = 240V, I D = 14A
V GS = 10V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
20
105
30
75
18
4.5
8
50
120
70
160
25
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
14
56
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 14A
V GS = 0V, I S = 14A
dI F /dt =100A/ ? s
--
--
--
--
235
1.6
1.4
--
--
V
ns
? C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2.8mH, I AS = 14A, V DD = 50V, R G = 25 ? , Starting T J = 25 ? C
3. I SD ? 14A, di/dt ? 200A/ ? s, V DD ? BV DSS , Starting T J = 25 ? C
4. Essentially Independent of Operating Temperature Typical Characteristics
?2007 Fairchild Semiconductor Corporation
FDB14N30 Rev. C1
2
www.fairchildsemi.com
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